Abstract
We investigate the blue photoluminescence of Si+-implanted SiO2 films under picosecond UV excitation. The emission intensity exhibits a nonlinear increase with increasing excitation intensities, accompanied by pulse shortening. The photoluminescence decays nonmonoexponentially in time. However, the nonlinearities are not associated with significant spectral narrowing. To explain the results, we propose and numerically investigate a kinetic model based on competition between radiative (both spontaneous and stimulated) and nonradiative recombination in isolated luminescence centers in the SiO2 matrix. Good agreement between theoretical and experimental data seems to confirm the existence of stimulated emission in the films, however, under extremely high excitation densities only (approximately 100 MW/cm2).
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