Abstract
Investigations of the spontaneous and stimulated emission spectra by optical pumping of ZnO layers deposited on silicon oxide were carried out. The stimulated emission pumped under ultraviolet 337 nm N 2 laser excitation was observed at 397 nm at room temperature from ZnO–SiO 2–Si type thin film structures. The threshold pumped power for the electron-hole plasma recombination laser process is of the order of 35 MW/cm 2.
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