Abstract
Photoluminescence spectra of ZnSe epitaxial layers grown by MOVPE on GaAs substrates are investigated at 4.2 K under high excitation using a XeCl excimer laser (308 nm). It is demonstrated by lineshape fitting that at the highest excitation densities (300 kW cm −2 – 3 MW cm −2) the emission spectra are due to an electron-hole plasma recombination, strongly influenced by stimulated emission. No emission band attributable to exciton-exciton inelastic scattering is found under these excitation conditions.
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