Abstract
Electroluminescence test and SQW InGaN/GaN heterostructures were characterised with electroluminescence, photoluminescence, photoluminescence excitation and stimulated emission spectroscopy. It was found that the electroluminescence emission from the heterostructure edge reveals leaking modes. Laser action under optical excitation was achieved up to room temperature in the SQW heterostructures which showed sharp photoluminescence excitation bands and, thus, a sufficiently homogeneous distribution of the In atoms in the quantum well. We suppose that one of the possible mechanisms of the yellow luminescence excitation in the QW structures is the energy transfer by tunneling of carriers from the electron states in the InGaN layers into the excited states responsible for the yellow luminescence in the GaN barriers.
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