Abstract
The energy−dependent relaxation time has been incorporated in the study of stimulated electron−phonon−photon interactions in nondegenerate semiconductors in the presence of the external dc electric field. The Boltzmann transfer equation has been used to obtain the gain constant. The results show that the percentage change in the gain constant is ∼15% (for ql<1, Eac=3 V/cm, Ω/ω=0.1, 〈vd〉=1.5 vs) and ∼30% (for ql≳1, Eac=30 V/cm, Ω/ω=2, 〈vd〉=2.0 vs) for moderate strengths of oscillating electromagnetic field (OEF). For weak OEF (Eac<ωvs/Ωμ for ql<1 and Eac <mΩ2/qe for ql≳1), no significant percentage change is observed in the gain constant in both frequency domains.
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