Abstract
The chemisorption of Cl 2 on Si(111)-7 × 7 and Si(100)-2 × 1 and the mechanism for stimulated desorption of Cl + from Si are studied with soft X-ray photoelectron spectroscopy (SXPS) and photon-stimulated desorption (PSD). It is shown that Cl 2 interacts with Si(111)-7 × 7 at room temperature to form mono-, di- and tri-chlorides, while primarily monochlorides are formed on Si(100)-2 × 1. These differences are explained in terms of the reconstructions of each clean surface. The stimulated desorption of Cl + ions has a threshold at ~ 20 eV that results from a direct excitation of a Cl 3s electron to an unoccupied Cl antibonding level. No direct desorption of Cl + ions is observed at the Si 2p edge. Differences between the mechanisms for F + and Cl + desorption from Si are discussed.
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