Abstract
The purpose of this work is study of silicon single crystal wafer thermal stability in correlation with three-dimensional (3D) surface characterization using atomic force microscopy (AFM). The samples were heated up to 500 °C for the period of 2 and 4 h. Then the surfaces of wafers were processed by ion beam. The difference in surface structure of processed and reference samples was investigated. Structural and compositional studies are provided by X-ray photoelectron spectroscopy. Stereometric analysis was carried out on the basis of AFM-data, for stressed and unstressed samples. The results of stereometric analysis show the correlation of statistical characteristics of surface topography and structure of surface and near-surface area. Characterization techniques in combination with data processing methodology are essential for description of the surface condition. All the extracted topographic parameters and texture features have demonstrated a deeper analysis that can be used for new micro-topography models.
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