Abstract
Negative capacitance (NC) effects in ferroelectric/paraelectric (FE/PE) stacks have been recently discussed intensively in terms of the steep subthreshold swing (SS) in field-effect transistors (FETs). It is, however, still disputable to stabilize quasi-static-NC effects. In this work, stepwise internal potential jumps in a metal/FE/metal/PE/metal system observed near the coercive voltage of the FE layer are reported through carefully designed DC measurements. The relationship of the internal potential jumps with the steep SS in FETs is also experimentally confirmed by connecting a FE capacitor to a simple metal-oxide-semiconductor FET. On the basis of the experimental results, the observed internal potential jumps are analytically modelled from the viewpoint of bound charge emission associated with each domain flip in a multiple-domain FE layer in a FE/PE stack. This view is different from the original NC concept and should be employed for characterizing FE/PE gate stack FETs.
Highlights
Negative capacitance (NC) effects in ferroelectric/paraelectric (FE/PE) stacks have been recently discussed intensively in terms of the steep subthreshold swing (SS) in field-effect transistors (FETs)
These should be verified urgently, because they are critical for further advancing the material science as well as electron device performance of FE/PE stacks to elucidate whether the quasi-static NC can be really stabilized or not, and whether the steep SS characteristics so far demonstrated are really promising for low-power complementary metal-oxide-semiconductor (CMOS) applications or not
Based on the formulation shown in Supplementary Note 138 and the measured resistance of PE CAPs (~1012 Ω), a voltage measurement system with the input impedance higher than ~1014 Ω was needed for accurate DC-mode measurements
Summary
Negative capacitance (NC) effects in ferroelectric/paraelectric (FE/PE) stacks have been recently discussed intensively in terms of the steep subthreshold swing (SS) in field-effect transistors (FETs). On the basis of the experimental results, the observed internal potential jumps are analytically modelled from the viewpoint of bound charge emission associated with each domain flip in a multiple-domain FE layer in a FE/PE stack. This view is different from the original NC concept and should be employed for characterizing FE/PE gate stack FETs. 1234567890():,; Negative capacitance (NC) effects in ferroelectric (FE) films have attracted intensive attention recently in terms of both polarization kinetics modeling and low-power complementary metal-oxide-semiconductor (CMOS) applications. The results provide a clear physical insight to understanding the small SS values in FETs with FE/PE gate stacks reported so far
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