Abstract
We investigate step configurations during homoepitaxial growth on Si(1 1 1) near the “1×1”–7×7 phase transition temperature. The surface mass diffusion constant is larger on “1×1” than on 7×7. This difference in the surface mass diffusion constant, coupled with the preferential nucleation of 7×7 at the upper side of the step, causes asymmetry in the surface mass diffusion during the “1×1”–7×7 phase transition. This asymmetry leads to step wandering during homoepitaxial growth.
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