Abstract
The surface structures of 7°, 3.5°, and 2.5° vicinal Si(100) samples tilted about [011̄] have been studied with low‐energy electron diffraction. Double‐atomic‐height steps can be formed on these surfaces after sufficient heat treatment. Angular profile analysis of the integral‐order diffracted beams is used to determine step height, average terrace size, terrace size distribution, and degree of step edge roughness. Angular profile analysis of the fractional‐order diffracted beams is used to determine the relative fraction of single‐atomic‐height steps and to measure the degree of correlation in the (2×1) dimer row shifts. The latter is seen as a splitting in the (2×1) beam that is one‐half the splitting distance in the (00) beam. This splitting is observed to be reversible with temperature, indicating a phase transition in the configuration of (2×1) dimer row shifts.
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