Abstract
On a Si(111) vicinal face near the structural transition temperature (860 °C), the 7 ×7 structure and 1 ×1 structure coexist on a terrace. The 7 ×7 structure is on the upper side of steps and the 1 ×1 structure is on the lower side of steps. The diffusion coefficient on the 1 ×1 structure is larger than that on the 7 ×7 structure. In this paper, taking account of the difference in the diffusion coefficient, we study the possibility of step instabilities, step wandering and step bunching, occuring during sublimation.
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