Abstract
AbstractThis paper reports the effect of step‐graded interlayers on MOVPE InGaN epi‐layer quality. Multilayer epitaxial structures consisting of Inx Ga1–xN layers with various compositions have been successfully grown. HRXRD measurements reveal that the insertion of step‐graded interlayers significantly reduces the twist while little effects are observed on tilt. Decreasing of twist with increasing the number of interlayers is found to be remarkable up to a certain value and then maintain nearly the same even with increasing the In composition. Different types of dislocation density have also been studied using the X‐ray diffraction analysis. Dislocation densities, particularly the edge dislocation density, decrease considerably with the insertion of interlayers for higher In composition. An edge dislocation of 3 × 1010 cm–2 is obtained for a smple with 0.25 In composition, that seems to come from the GaN layer beneath the step‐graded interlayers (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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