Abstract
A two-step homoepitaxial growth process producing step-free surfaces on low dislocation density, Ga-polar ammonothermal GaN single crystals is described. Growth is conducted under very low supersaturation conditions where adatom incorporation occurs predominantly at step edges, and lateral growth is strongly preferred. The achievable step-free area is limited by the substrate dislocation density. For ammonothermal crystals with an average dislocation density of ∼1 × 104 cm−2, step-free mesas up to 200 × 200 μm2 in size are achieved. These remarkable surfaces create a unique opportunity to study the effect of steps on the properties and performance of semiconductor heterostructures.
Highlights
Engineered substrate vicinality is an important innovation in semiconductor heteroepitaxy
The crystal growth formalism of Burton, Cabrera, and Frank teaches that crystals grow by a screw-dislocation mediated mechanism if such defects are present and that each screw dislocation that threads to the crystal surface is a permanent source of new steps.[13]
While this flattening process is possible in GaN, the maximum lateral area is a strict function of the screw dislocation density
Summary
Engineered substrate vicinality is an important innovation in semiconductor heteroepitaxy. Step-free GaN surfaces grown by confined-area metal-organic vapor phase epitaxy
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
