Abstract
We have demonstrated the molecular beam epitaxial growth of (Al,Ga)Sb tilted superlattices (TSLs) on 2° vicinal (100) GaSb and GaAs substrates. The TSLs grown on GaSb substrates exhibit good AlSb/GaSb separation and a uniform short-range superlattice period. The TSLs grown on GaAs substrates are similar, except for the presence of threading dislocations and a decreased uniformity. The existence of TSLs proves that step-flow growth can occur in this material system, and in the presence of strain. Lateral fluctuations in the tilt angle of the superlattice are observed and are found to be caused by a nonuniform adatom distribution which is correlated with the surface step density.
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