Abstract

Using scanning tunneling microscopy, we have studied the temperature dependent decay of multilayer Cu islands on Cu(111). We focus on the normal diffusion limited decay of small islands on top of large islands where no rapid decay events occur. Using a numerical integration of the analytical expression for diffusion limited decay, we determine the step edge barrier as a function of temperature. The additional activation barrier for mass transport across the step edge is found to be 0.22 eV.

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