Abstract
Step-debunching, or the transformation of step structure from double atomic height to single atomic height, has been observed using scanning tunneling microscopy (STM) on the vicinal Si(001) surface upon adsorption of 0.8 ML Sn. The surface shows a two-domain c(8×4)-Sn structure containing defective features such as antiphase boundaries and so on. One of the causes of step-debunching is the release of misfit-induced strain between the substrate and adsorbates. The other is related to kinetics, where Sn replaces surface silicon layers during the formation of c(8×4) and the removed Si atoms are incorporated into the step to extend the terrace. The kinetics on the small terrace width is responsible for the observed defective surface structure.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
