Abstract
Abstract Chemical vapor deposition (CVD) of silicon carbide (SiC) on off-oriented SiC{0001} substrates (step-controlled epitaxy) is reviewed. In step-controlled epitaxy, surface steps on off-oriented SiC{0001} substrates serve as a template which forces the replication of substrate polytype in the epilayer, and thereby homoepitaxy is realized. High quality of SiC epilayers has been elucidated through optical and electrical characterization. The background doping level could be reduced down to less than 1 × 10 14 cm −3 , and a high electron mobility of 851 cm 2 V −1 s −1 was obtained. Excellent doping controllability over a wide range has been achieved by in-situ doping of a nitrogen donor and an aluminum acceptor. High-voltage (greater than 1 kV) Schottky barrier diodes with low specific on-resistances (less than 5 mωcm −2 ) have been demonstrated by utilizing high-quality epilayers.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
