Abstract
We report the crystallization and photoluminescence (PL) properties ofamorphous Si:H/SiNx:H multilayer (ML) films treated bystep-by-step laser annealing. The results of Raman measurements showthat the nanocrystalline Si (nc-Si) grains are formed in the a-Si:Hlayers under the constrained growth mechanism. The blue shift of PLpeak with grain size is observed and can be attributed to the quantumconfinement effect. For comparison, we also report the crystallizationand PL of a-Si:H/SiNx:H ML samples by normal one-step treatment.This method of step-by-step laser treatment will be a candidate to makenc-Si quantum dots in amorphous Si:H/SiNx:H ML as anactive layer in microcavities.
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