Step bunching process induced by the flow of steps at the sublimated crystal surface

Abstract

Stepped GaN(0001) surface is studied by the kinetic Monte Carlo method and compared with the model based on Burton-Cabrera-Frank equations. Successive stages of surface pattern evolution during high temperature sublimation process are discussed. At low sublimation rates, clear, well defined step bunches form. The process happens in the absence or for very low Schwoebel barriers. Bunches of several steps are well separated, move slowly and stay straight. Character of the process changes for more rapid sublimation process where double step formations become dominant and together with meanders and local bunches assemble into the less ordered surface pattern. Solution of the analytic equations written for one dimensional system confirms that step bunching is induced by the particle advection caused by step movement. Relative particle flow towards moving steps becomes important when due to the low Schwoebel barrier both sides of the step are symmetric. Simulations show that in the opposite limit of very high Schwoebel barrier steps fracture and rough surface builds up.