Abstract
A comparative study of kinetically and thermodynamically driven growth instabilities in the Si/SiGe heterosystem on vicinal Si(001) is reported. Single Si 1− x Ge x -layers and Si 1− x Ge x /Si superlattices are investigated by mapping out a wide range of the relevant growth parameter space. In contrast to earlier reports no evidence for strain-induced step-bunching is found. Single Si 1− x Ge x layers replicate the morphology of the underlying buffer layers and tend to form hut clusters near thermal equilibrium. In Si 1− x Ge x /Si superlattices no significant influence of the Ge-related strain on the step-bunching morphology can be seen. On the other hand, the effect of growth temperature is very pronounced, again indicating the dominant role of kinetics in the formation of step-bunches.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
