Abstract
YBa 2Cu 3O 7 (YBCO) step edge Josephson junctions were fabricated on sapphire substrates. The steps were formed on r-plane sapphire substrates by using Ar-ion milling with PR masks. The step angle was controlled in the wide range from 20° to 70° by adjusting both the Ar-ion incident angle and the PR mask rotation angle relative to the incident Ar-ion beam. CeO 2 buffer layer and in situ YBCO thin films were deposited on the stepped r-plane sapphire substrates by pulsed laser deposition. The YBCO film thickness was varied to obtain the ratio of film thickness to the step height in the range from 0.5 to 1. The step-edge junction exhibited RSJ-like behavior with I C R N product of 100∼300 μV, critical current density of 10 3∼10 5 A/cm 2 at 77 K.
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