Stencil mask using ultra-violet-curable positive-tone electron beam resist

Abstract

Stencil masks are used in fabrication processes such as photolithography for circuit patterning and micro-electromechanical systems devices. A stencil mask has micro- and nano-scale through-hole patterns on a substrate, and the metal or Si through-patterns are chemically etched along electron beam (EB) lithographic patterns on a resist. However, the electron beam lithography (EBL) and chemical etching processes are complex. Therefore, in this study, a simple and high-throughput fabrication process is proposed. In this process, an ultra-violet (UV)-curable positive-type EB resist was prepared, which can be used to prepare a polymer substrate that can be lithographed by an EB. The micro-scale through-hole patterns were created on a resist substrate with a thickness of approximately 5 μm. Cr deposition was demonstrated on an Si wafer using a fabricated stencil mask. The deposited Cr thin film traced the EBL pattern on the wafer through the mask. The usefulness of the method was demonstrated by preparing a polymer stencil mask.