Abstract
InAlN/Al/GaN high electron mobility transistors (HEMTs) directly on Si with dynamic threshold voltage for steep subthreshold slope (<60 mV/dec) are demonstrated in this study, and attributed to displacement charge transition effects. The material analysis with High-Resolution X-ray Diffraction (HR-XRD) and the relaxation by reciprocal space mapping (RSM) are performed to confirm indium barrier composition and epitaxy quality. The proposed InAlN barrier HEMTs exhibits high ON/OFF ratio with seven magnitudes and a steep threshold swing (SS) is also obtained with SS = 99 mV/dec for forward sweep and SS = 28 mV/dec for reverse sweep. For GaN-based HEMT directly on Si, this study displays outstanding performance with high ON/OFF ratio and SS < 60 mV/dec behaviors.
Highlights
Wide-bandgap GaN-based high electron mobility transistors (HEMTs) have attracted lots of attention due to sensor applications for gas, pH, and biomedical analyses, etc. [1,2]
How to lower the operation voltage by using steep switching technology is a critical issue in the Internet of Things (IoT) era, which is beneficial for reducing power consumption and improving reliability
The InAlN HEMTs offer the opportunity of use in environments with temperatures of at least 1000 ◦ C. This characteristic makes high temperature sensor applications feasible InAlN barrier metal insulator semiconductor high electron mobility transistors (MIS-HEMTs) on sapphire have been demonstrated by the Hong Kong University of Science and Technology (HKUST) [7] with Schottky
Summary
Wide-bandgap GaN-based HEMTs have attracted lots of attention due to sensor applications for gas, pH, and biomedical analyses, etc. [1,2]. Intel exhibits a near ideal 60 mV/dec of subthreshold swing for MIS-HEMT enhancement mode, and a Sensors 2018, 18, x FOR PEER REVIEW depletion mode device with steep SS < 60 mV/dec because of “negative” capacitance effect is shown usingInAlN/GaN an AlInN metal-oxide-semiconductor (MOS). SiC [10].high layer with incorporated In exhibits a steep switch slope, ultra-low drain current leakage floor, and. The advantages of InAlN HEMTs ultra-low drain current leakage floor, and high ON/OFF ratio when compared with AlGaN barriers. The InAlN/AlN/GaN HEMTs structure is grown on the 150 mm/100 mm Si(111) substrate. The Ohmic source/drain contacts are placed by the liftoff technique, in which Al2 O3 the gate-last process is performed. The Ohmic source/drain contacts are placed by the liftoff cap layer is removed in the same layout of lithography step. AlN(2.2 nm) barrier layer. (c) Strained-layer superlattices/AlN on Si substrate
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