Steep Slope and Near Non-Hysteresis of FETs With Antiferroelectric-Like HfZrO for Low-Power Electronics

Abstract

The antiferroelectricity in HfZrO2 (HZO) annealed at 600 °C with an abrupt turn ON of FET characteristics with SS $_{\rm {min}}=23$ mV/dec and SS $_{\rm {avg}}=50$ mV/dec over 4 decades of $I_{\rm {DS}}$ is demonstrated. The near non-hysteresis is achieved with an antiferroelectric-like HZO due to a small remanent polarization and a coercive field. A feasible concept of coupling the antiferroelectric and ferroelectric type HZO are used for low-power electronics and the memory applications, respectively.