Abstract
Free-standing thick films of thermally grown SiO2 have been prepared by pressure steam oxidation of Si at 650–1000 °C. Characterization of these films by Raman spectroscopy reveals no important structural differences from appropriately annealed bulk fused silica, except for the different water content, which is readily determined. We show that no features of the Raman spectra can be associated with growth-induced structural anisotropy or the structures that give rise to such metal-oxide-semiconductor defects as Qss.
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