Abstract

The steady-state stability of external-cavity semiconductor lasers (ECL) operating at the strong feedback regime is investigated. A simple analytical expression for the critical external power reflectivity, above which the ECL steadystate is stable, is presented and compared with other authors' results. The validity of this expression is discussed and compared with results obtained from accurate simulation of a set of improved differential nonlinear laser rate equations. It is shown that the steady-state bistability in the strong feedback regime can be first denounced by a kink in the L-I and frequency shift vs bias current characteristics which, after further reduction of the external feedback strength, is transformed into a hysteresis region.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.