Abstract
The steady state characteristics of a normally-off 4H-SiC Bipolar Mode FET (BMFET) with a low on-resistance are investigated in a wide range of currents and temperatures by means of an intensive numerical simulation study which clarifies what are the main design constraints. Specific physical models and parameters strictly related to the presently available 4H-SiC technology are carefully taken into account. A drain forward current density up to 500 A/cm2, a specific on-resistance lower than 2 mΩ∙cm2 and a current gain in the order of a few tens are calculated. The blocking voltage is in excess of 1.3 kV with a low leakage current. These results are compared with the experimental data measured in the same test conditions of another SiC power device already introduced to the market.
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