Steady-state electron and hole space charge distribution in LPCVD silicon nitride films

Abstract

Trapped electron and hole space charge distributions in silicon nitride are derived from steady-state measurements of the change in flatband voltage versus the maximum field in the nitride. These measurements coupled with the Arnett-Yun model provide a good relative measure of the hole and electron trap densities, trapping lengths, and cross sections. Significant differences between hole and electron values at 25 and 175 °C were observed.