Abstract
Using the hydrodynamic model of semiconductor-plasmas and following the coupled-mode approach, a detailed analytical investigation is undertaken to study both steady-state and the transient Raman gain in transversely magnetized narrow band-gap semiconductors arising from electron density perturbations and molecular vibrations of the medium. Using the fact that the origin of stimulated Raman scattering (SRS) lies in the third-order susceptibility of the medium, we obtain an expression for the gain coefficient of the backward Stokes mode in steady-state and transient regimes and study the dependence of the magnetic field and pump pulse duration on its growth rate. The threshold pump intensity and optimum pulse duration for the onset of transient SRS are estimated. An externally applied magnetic field substantially enhances the transient SRS gain coefficient in narrow band-gap semiconductors, which can be of great use in the compression of scattered pulses.
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