Abstract
An investigation of photoconductivity in thin films of Sb 15Ge 10Se 75 prepared by vacuum evaporation is reported. The measurements were carried out at various temperatures and illumination intensities. Photoconductivity is found to increase exponentially with no maxima found in temperature range (303–373 K). The value of I ph/ I d is found to decrease with an increase in temperature. In order to investigate the nature of decay following steady state illumination, transient photoconductivity measurements have also been carried out at various temperatures and illumination intensities. The results are well explained by the dispersive diffusion controlled recombination of excess D° states in localised-localised recombination.
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