Abstract
We have considered an InGaAs/InAlAs/InP/InGaAs ballistic tunnel transit-timeoscillator under dc and small high frequency ac electric field. Using the quantumtransmitting boundary method coupled with the Poisson equation, we have studiedelectron tunnelling through the barrier assuming that the electrons have anonparabolic dispersion, and have got the steady state field–current characteristics(E–j) of the oscillator. As a result of the small signal analysis based on these characteristics, wefind the negative resistance windows, which are the work regions of the oscillator. Thewindows get much deeper with the increase of the dc electric field. Their frequencies are inthe terahertz (THz) range, which may be used to develop efficient and powerful sources ofthis range.
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