Abstract
A review is presented of the current technical status of large-diameter GaAs crystal growth, the effects of residual impurities, stoichiometric defects and crystalline imperfections on the electrical properties of undoped semi-insulating GaAs, and the effectiveness of Group III and V isovalent, lattice-hardening dopants in yielding dislocation-free, semi-insulating GaAs crystals. Factors related to crystal growth, postgrowth annealing, and the preparation of ultraflat, damage-free GaAs wafers, which can significantly improve the performance and yields of directly implanted devices and monolithic circuits are discussed.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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