Status and prospects of wide bandgap semiconductor devices

Abstract

Wide bandgap semiconductor materials, such as silicon carbide (SiC) and gallium nitride (GaN), have attracted significant attention due to their exceptional electronic and thermal properties, making them ideal for high-power and high-frequency applications. This study provides a comprehensive review of SiC and GaN materials and recent developments in power electronics, radio frequency (RF) devices. The study focuses on the unique properties of these materials, which enable them to outperform traditional silicon-based devices in terms of efficiency, power density, and overall performance. The objectives include examining material properties, assessing SiC and GaN-based device performance, comparing electron mobility, on-resistance, and temperature dependence, and identifying areas for future research. The content covers a range of devices, including SiC MOSFETs, IGBTs, GaN HEMTs, and their applications, with a focus on recent advances in material quality and device reliability. The research contribution of the paper lies in its comprehensive analysis, which serves as a valuable reference for researchers, manufacturers, and policymakers working to accelerate the development of advanced materials and technologies. The successful implementation of SiC and GaN-based devices will lead to more energy-efficient systems, enhanced performance across various sectors, and a reduction in global energy consumption and environmental impact, revolutionizing the electronics industry.