Abstract
In random telegraph signals of small MOSFET's two different time constants are observed, τ c for capture into slow states and τ E for emission. It is impossible to explain the observed increase of τ E with increasing Fermi level by a simple trapping and detrapping mechanism. Statistics are calculated in this paper, where the electron enters the slow state not directly from the conduction band but from a fast interface state. During the long times τ c and τ E the fast interface state is in quasi-equilibrium with the conduction band. The proposed model is compared with experimental data from different authors.
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