Abstract
We perform vacancy-mediated lateral manipulations of Si adatoms on the $\text{Si}(111)\text{\ensuremath{-}}(7\ifmmode\times\else\texttimes\fi{}7)$ surface by atomic force microscopy at room temperature. A variety of line profiles associated with different atom hopping processes is observed in successive topographic line scans for the atom manipulations. Atom manipulation statistics show stochastic behavior in atom movements. The probability of atom movement increases with a decrease in the tip-surface distance. Moreover, it depends on the scan direction, even with crystallographic equivalence, because of tip apex asymmetry. In addition, the hopping rate reflects the difference in stability of the adsorption sites of the manipulated atoms.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
