Abstract
Surface statistics in narrow-gap zincblende semiconductors are examined. The model employed consists of a nonparabolic conduction band and a parabolic valence band taking indium antimonide as a representative for this family of materials. The statistics of the surface space-charge region are evaluated for a range of surface potentials and bulk concentrations using both the nonparabolic band and the standard parabolic band models. These analyses are made using the semiclassical approach.
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