Abstract
AbstractAn analytical expression for the statistical distribution function of conduction electrons in SiO2 is derived by taking into account static electric fields of different strengths and various types of electron‐phonon interaction (i.e. scattering of electrons due to longitudinal‐optical, transversaloptical, and acoustic modes). Electronic energy balances and critical electric field strengths as well as the threshold and runaway behaviour of conduction electrons are derived from their distribution function, the time and field dependence of which is analysed quantitatively.
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