Statistical theory and applications of lock-in carrierographic image pixel brightness dependence on multi-crystalline Si solar cell efficiency and photovoltage

Abstract

A solar cell lock-in carrierographic image generation theory based on the concept of non-equilibrium radiation chemical potential was developed. An optoelectronic diode expression was derived linking the emitted radiative recombination photon flux (current density), the solar conversion efficiency, and the external load resistance via the closed- and/or open-circuit photovoltage. The expression was shown to be of a structure similar to the conventional electrical photovoltaic I-V equation, thereby allowing the carrierographic image to be used in a quantitative statistical pixel brightness distribution analysis with outcome being the non-contacting measurement of mean values of these important parameters averaged over the entire illuminated solar cell surface. This is the optoelectronic equivalent of the electrical (contacting) measurement method using an external resistor circuit and the outputs of the solar cell electrode grid, the latter acting as an averaging distribution network over the surface. The statistical theory was confirmed using multi-crystalline Si solar cells.