Abstract
Non Ionizing Energy Loss (NIEL) is the metric conventionally used to scale displacement damage degradation of irradiated semiconductor materials. Degradation of many electrical parameters is scaled according to this average parameter. But some deviations from NIEL scaling approach are observed from time to time. The stochastic nature of irradiation is often ignored. But, the degradation is not necessarily proportional to the average degradation level given by NIEL. The scatter of the irradiation degradation level is studied in this paper. This analysis provides some hints in order to interpret some discrepancies observed between measurements and predictions made with NIEL. Reliability of NIEL scaling method, applied to dark current degradation, is discussed for Silicon and Gallium Arsenide optoelectronic devices.
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