Statistical phonon transport model for multiscale simulation of thermal transport in silicon: Part II – Model verification and validation

Abstract

In Part I, the statistical phonon transport (SPT) model for solving the phonon Boltzmann transport equation in a statistical framework was presented. In this part, verification and validation of the SPT model is performed. The three-phonon scattering model is evaluated by considering populations of phonons interacting within an enclosed volume of silicon. The capability of the SPT model to capture the unique aspects of phonon transport from the diffuse to the ballistic thermal transport regimes is verified. Steady-state and transient results are validated against analytical solutions, results from Monte Carlo models, and experimental data for homogeneous silicon.