Abstract
This paper discusses the statistical modeling of the V th distribution of an ovonic threshold switch, an integral component of high-speed, high-capacity storage-class memory. A distribution function that explains the V th variation and a method for estimating and judging it is proposed based on three representative switching mechanisms—thermal runaway model, physically based electrical model, and two-state defect model. We examined the relationship between the segment V th distribution and V th minimum distribution is examined by considering chip-level scaling in Monte Carlo simulations and analytical analysis of the distribution function. The latter distribution approaches the Weibull distribution; however, its convergence speed differs.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.