Abstract
We show that radiation-induced dopant deactivation in MOS capacitors that simulate the base oxides of silicon bipolar transistors is due primarily to direct neutralization by protons. The strong dependence of the deactivation process on electric field is related to the transport of H/sup +/ in the depletion region. The probability of acceptor neutralization near the Si surface is higher for small irradiation biases when protons diffuse through the depletion layer rather than drift through it. The observed dependence of the neutralized-acceptor concentration on the irradiation bias is explained by analytical modeling and statistical Monte Carlo simulations. The analytically estimated and numerically calculated density of passivated acceptors near the Si-SiO/sub 2/ interface is in very good agreement with experimental data. Neutralization of protons in the Si is not necessary to describe the observed dopant deactivation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
