Statistical model for MOSFET low-frequency noise under cyclo-stationary conditions

Gilson Wirth,John Krick,Roberto Da Silva,Ralf Brederlow,Purushothaman Srinivasan

doi:10.1109/iedm.2009.5424240

Statistical model for MOSFET low-frequency noise under cyclo-stationary conditions

Gilson Wirth, John Krick + Show 3 more

https://doi.org/10.1109/iedm.2009.5424240

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Publication Date: Dec 1, 2009

Citations: 21

Affiliation: Texas Instruments (United States), Universidade Federal do Rio Grande do Sul, Texas Instruments (Germany)

#Low-frequency Noise Behavior #Cyclo-stationary Conditions + Show 8 more

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Abstract

A statistical model for the low-frequency (LF) noise behavior of MOSFETs under cyclo-stationary excitation is presented. The model is based on discrete device physics quantities, which are shown to cause statistical variability in LF noise behavior. Good agreement between experimental data, Monte Carlo simulations and model is demonstrated.

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