Abstract
We statistically investigate the development of GaAs/GaAsBi core-multi shell nanowires. The wire diameters were precisely controlled by adjusting the growth procedure. The wire having GaAs/GaAsBi core-shell nanowire, presumably having Bi concentration less than 1%, shows straight sidewall with sphere-shaped structure on the tip. The diameter was 250 nm ± 32 nm. GaAs/GaAs 0.98 Bi 0.02 /GaAs core-multi shell nanowire showed characteristic rough surface. The diameter was 376 nm ± 33 nm. In contrast, when we grew GaAs nanowire with identical growth conditions of the multi shell nanowires, they showed straight sidewall with its diameter described by 375 nm ± 30 nm. The results shows we can control the diameter and the shell structures of the wires. Further, specific surface roughening occurs by the introduction of Bi on the outer shells.
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