Abstract
Operation of a short and narrow channel metal-oxide-semiconductor field-effect transistor (MOSFET) memory device with a few nanocrystalline Si (nc-Si) dots in the active region has been investigated at 300 and 30 K. The discrete shift of the threshold voltage ( V th) in the current-voltage characteristics that arises from the screening effect of the charge stored in the nc-Si dot above the FET channel, suggests memory operation. It is found that the value of V th changes with temperature whereas the magnitude of the shift in V th is independent of temperature. The lifetime of the electrons stored in the floating node has also been investigated at different read voltages.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
