Abstract
The characteristics of low-power and power thyristors based on dislocation-free single crystals of germanium-doped silicon in the range of concentrations NGe ∼ (0.05–1.5) × 1020 cm−3 are presented. Using the methods of processing of the experimental data in STATISTICA and MathCAD medium the criteria parameters of thyristors were measured under the action of radiation and high temperature gradients. The expediency of using germanium-doped silicon to increase the thermal stability and radiation resistance of devices exposed to γ-radiation in the dose range up to 2.94 × 106 mSv was shown.
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