Abstract
STI CMP is a widely used and basic process in current VLSI FEOL manufacturing of both logic and memory chips. Highly selective slurry CES333 is standard for the STI CMP soft-landing process stopping on the barrier layer. However, it has been reported and also observed in mass production that the removal rate of CES333 has a tendency to vary from wafer to wafer, especially at the wafer edge. This is an issue in mass production of smaller technology nodes. More stable performance is, however, difficult to achieve owing to the character of the slurry. A creative method of analyzing a vast database was employed to devise a solution and meet CMP requirements.
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