Abstract
For slow recombination waves in Si:Zn, stationary intensity profiles along the specimen are measured with an SEM operated in the voltage-contrast mode. The main findings are as follows: (i) The intensity falls from a maximum with increasing distance from the cathode, where a stationary high-field domain is located, and almost vanishes far short of the anode. (ii) The intensity grows with specimen voltage. (iii) The voltage-contrast image for the highest specimen voltage displays oscillatory potential variation over the stationary high-field domain, indicating the stratification of electric field.
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