Abstract
In CdS crystals with an $N$-shaped negative differential conductivity range, stationary high-field domains adjacent to the electrodes are observed. With increasing applied voltage these steplike domains increase in width, staying attached to the cathode until they fill the entire crystal; then a still higher-field domain forms at the anode and increases in width. These domains can be explained within an earlier published theory, and allow the determination of electron densities at the cathode-CdS boundary and in the field-quenched region. The analysis of these stationary domains presents a new tool for work-function (metal-semiconductor) investigations.
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