Abstract
Abstract The formation of stationary amorphous layers during high-temperature ion irradiation of semiconductors is considered in the case of 5 keV Ar+ ion bombardment of germanium. The dependence of their thickness on substrate temperature and ion flux is studied. It is shown that the thickness of the amorphous layer does not depend on the initial structural state of a sample. Local critical temperatures for ion-beam induced crystallization and amorphization are introduced and their dependence on depth for the given conditions of ion bombardment is obtained. These two parameters are shown to coincide. A model of defect steady-state formation during ion irradiation is proposed.
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